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Conferences > IQEC > 1990 > QTUL > QTUL4
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper QTUL4

Enhanced charge accumulation in asymmetric double barrier diodes and sequential tunneling in two resonance double barrier diodes

T. K. WOODWARD, D. S. CHEMLA, I. BAR-JOSEPH, D. L. SIVCO, and A. Y. CHO

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Abstract

Double barrier resonant tunneling structures have generated wide technological interest as well as affording a unique opportunity to investigate the physics of quantum mechanical tunneling. Differential absorption spectroscopy (DAS) has been shown to be a useful tool for investigating the double barrier diode (DBD).1,2 We present some results of a study of an asymmetric DBD and also summarize a study of tunneling through the second resonance of a DBD having two confined states.

© 1990 Optical Society of America

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