Abstract
Since the first prediction of gain in Sn at 110.5 eV,1 the Ni-like scheme has been used to experimentally demonstrate gain at 44.8 Å in Ta.2 Amplification has been demonstrated in high-Z materials, starting with Eu(Z = 63), which required an electron temperature of 600 eV.3 The requirement of high electron temperature for high-Z materials has necessitated the use of large scale laboratory facilities.
© 1990 Optical Society of America
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