Reaction of Ga <sub>x</sub> As y + clusters with NH3

L. H. WANG; L. P. F. CHIBANTE; FRANK K. TITTEL; R. F. CURL; R. E. SMALLEY

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1990),
paper QTHG2

Reaction of ${Ga}_{x} {As}_{y}^{+}$ clusters with NH₃

L. H. WANG, L. P. F. CHIBANTE, FRANK K. TITTEL, R. F. CURL, and R. E. SMALLEY

International Quantum Electronics Conference 1990

Anaheim, California United States
21–25 May 1990
ISBN: 1-55752-145-X

From the session
Surface and Microchemistry (QTHG)

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L. H. WANG, L. P. F. CHIBANTE, F. K. TITTEL, R. F. CURL, and R. E. SMALLEY, "Reaction of Ga _x As y + clusters with NH3," in International Quantum Electronics Conference, A. Owyoung, C. Shank, S. Chu, and E. Ippen, eds., Vol. 8 of OSA Technical Digest (Optica Publishing Group, 1990), paper QTHG2.

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Abstract

By using a Fourier transform ion cyclotron resonance (FT ICR) device, semiconductor cluster ions can be observed with extremely high mass resolution (~10⁵), and the surface physics and chemistry can be studied for a wide variety of conditions and reactants.¹ Extensive discussion of the design details of this apparatus has appeared elsewhere.^2,3

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