Effects of electron-hole Coulomb interaction in semiconductor lasers

WENG W. CHOW; STEPHAN W. KOCH; MURRAY SARGENT

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1990),
paper QTHA7

Effects of electron-hole Coulomb interaction in semiconductor lasers

WENG W. CHOW, STEPHAN W. KOCH, and MURRAY SARGENT

International Quantum Electronics Conference 1990

Anaheim, California United States
21–25 May 1990
ISBN: 1-55752-145-X

From the session
Quantum Well Lasers (QTHA)

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W. W. CHOW, S. W. KOCH, and M. SARGENT, "Effects of electron-hole Coulomb interaction in semiconductor lasers," in International Quantum Electronics Conference, A. Owyoung, C. Shank, S. Chu, and E. Ippen, eds., Vol. 8 of OSA Technical Digest (Optica Publishing Group, 1990), paper QTHA7.

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Abstract

The gain and refractive index in a semiconductor laser can be fairly well described by an inhomogeneously broadened two- level model in which the carrier distributions are driven into quasiequilibrium Fermi-Dirac distributions by carrier-carrier scattering.¹ The establishment of these distributions is the most important many- body effect in semiconductor lasers.

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