Abstract

Room temperature excitons in III-V semiconductor multiple quantum walls (MQWs) have been attributed to the enhancement of the exciton binding energy with respect to the homogeneous line-broadening, which remains comparable to the bulk value. However, despite large exciton binding energies of II-VI semiconductors, room temperature excitonic absorption peaks have been difficult to observe. This difficulty has been attributed to the large homogeneous broadening that results from strong exciton-phonon interactions [1].

© 1990 Optical Society of America