Abstract
Recent measurements1 in high purity molecular-beam-epitaxy grown GaAs have shown surprisingly that the radiative recombination time of free excitons in GaAs is of the order of 3.3 ns. The results were later interpreted in terms of the excitonpolariton picture.2 However, experiments using transient four-wave mixing showed the dephasing time in GaAs to be of the order of 7 ps, implying a minor role for the exciton-polariton effect.3
© 1990 Optical Society of America
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