Abstract
The recent observation of the optical rectification of femtosecond electromagnetic waves provides an alternative optical technique to characterize the depletion fields at semiconductor surfaces and interfaces 1 The basic physical mechanism of the optical rectification is the electromagnetic radiation from the transient photocurrent within the depletion width. The outward rectified field E1 radiated from a bare semiconductor surface can be expressed as follows.
© 1990 Optical Society of America
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