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Optica Publishing Group
  • International Conference on Quantum Electronics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper TuP42

THEORY OF AUGER RECOMBINATION INDUCED ENERGETIC CARRIER LEAKAGE IN GaInAsP/InP DOUBLE HETEROJUNCTION LASERS AND LIGHT EMITTING DIODES

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Abstract

An Auger recombination induced energetic carrier leakage theory is developed, which takes into consideration the rate of generation of energetic carriers through Auger recombination processes, the rate of energy relaxation of the energetic carriers through carrier-phonon interactions, and the leakage of energetic carriers over heterojunction barriers limited by diffusion and drift mechanisms.

© 1988 Optical Society of America

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