Picosecond Infrared Spectroscopy of Hot Carriers in a Modulation-Doped Ga0.47In0.53As Multiple-Quantum-Well Structure

T. Elsaesser; R.J. Bäuerle; W. Kaiser; H. Lobentanzer; W. Stolz; K. Ploog

International Conference on Quantum Electronics
OSA Technical Digest (Optica Publishing Group, 1988),
paper TuP28

Picosecond Infrared Spectroscopy of Hot Carriers in a Modulation-Doped Ga_0.47In_0.53As Multiple-Quantum-Well Structure

T. Elsaesser, R.J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog

International Quantum Electronics Conference 1988

Tokyo Japan
18–21 July 1988
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Poster Session II (TuP)

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T. Elsaesser, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog, "Picosecond Infrared Spectroscopy of Hot Carriers in a Modulation-Doped Ga0.47In0.53As Multiple-Quantum-Well Structure," in International Conference on Quantum Electronics, H. Inaba, T. Yajima, and T. Ikegami, eds., OSA Technical Digest (Optica Publishing Group, 1988), paper TuP28.

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Abstract

The investigation of hot carriers in ternary quantum well structures is of fundamental physical interest and of importance for the design of semiconductor devices, e.g. in optical communication systems. Recently, the cooling of hot carriers in undoped Ga_0.47In_0.53As/In_0.48Al_0.52As multiple-quantum- wells (BSWs) has been studied in picosecond photoluminescence experiments with a temporal resolution of 15 ps /1/.A MQW sample consisting of thin quantum wells with a single subband occupied by electrons sis well as by holes was investigated.

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