Abstract

Laser chemical etching of III-V semiconductors has potential applications in the, fabrication of microelectronic devices, but little is known about the, fundamental aspects of laser stimulated gas-surface interaction. Recently, the thermal and ion-assisted reactions of GaAs (100) with molecular chlorine have been reported to elucidate some of the basic details of the reaction, mechanism⁽¹⁾. This paper present the first study of the UV/visible laser stimulated interaction of Cl₂ with GaAs (100) surface. The experimental investigation couples CW supersonic molecular beam technique and time resolved mass spectrometry to provide more evidences for the Cl₂ incident translational energy effect as well as the mass and velocity distributions of the reaction products under 355 and 560 nm laser irradiation.

© 1988 Optical Society of America