Abstract

Semiconductor interference filters based on II-VI semiconductors show promise as large area, room temperature, optically bistable devices for applications in digital optical circuits [1] at visible wavelengths. These active filters, operating by opto-thermally induced changes in material optical constants, have generally been fabricated by thermal evaporation of multilayers of ZnSe or ZnS and some low index material. Evaporated filters are limited in thickness and tend to suffer from drift of operating point during use. In this work we have studied Fabry-Perot structures deposited entirely in an ultra-high vacuum (UHV) system using molecular beam (MB) techniques.

© 1988 Optical Society of America