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  • International Conference on Quantum Electronics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper PD23

WAVELENGTH-RESONANT ENHANCED GAIN/ABSORPTION STRUCTURE FOR OPTOELECTRONIC DEVICES

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Abstract

Operation of many optoelectronic devices relies on the interaction between a standing electromagnetic wave and an amplifying or absorbing semiconductor medium. This interaction is not spatially uniform, but is strongest at the antinodes of the standing-wave optical field and vanishes at the nulls. Thus, if for example the medium is amplifying, the carriers located in the vicinity of the antinodes are depleted by the interaction, while excess carriers may accumulate around the nodes. This problem was investigated in the early days of semiconductor lasers [1] as a possible mechanism for their multimode operation.

© 1988 Optical Society of America

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