Abstract
SUMMARY: Among the XeF laser gas mixture the halogen donor is a key factor of determining for laser kinetics concerning XeF(B) formation, relaxation and absorption, electron energy distribution, and discharge impedance. The NF3 donor has often been used rather than the F2 donor, since the XeF(B) quenching reaction by NF3 is approximately ten times slower than the quenching reaction by F2 (1) and, moreover, F2 gas has an absorption band at the XeF(B→X) lasing wavelength (2). However, there is a report (3) that the 3-atm He/Xe/F2 mixture could provide the higher overall efficiency than the 1-atm(approximately) mixtures containing NF3 donor. Low pressure operation of the XeF laser with atmospheric pressure mixtures is rather suitable to the scaling of the laser system.
© 1988 Optical Society of America
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