Abstract

Utilizing the nonequilibrium growth technique of molecular beam epitaxy (MBE), new opportunities exist in the materials development of the family of II-VI compounds and associated diluted magnetic semiconductors. Although interest in the II-VI compounds for potential optoelectronic device applications has existed for some time, realization of the potential for these materials has been hindered by a propensity for defect generation combined with problems associated with dopant incorporation. Most of the previous experience with II-VI materials has been based on equilibrium growth techniques. As an example of the possibilities afforded by nonequilibrium growth methods, heretofore hypothetical zinc blende MnSe has been grown by MBE. This magnetic semiconductor has been incorporated in strained-layer superlattice structures and grown as strain-relieved epitaxial layers.

© 1987 Optical Society of America