Abstract

The photorefractive gain coefficient of undoped semi-insulating GaAs at 1.06 μm is measured as a function of grating spacing, applied electric field, and frequency detuning using nondegenerate two- wave mixing. The results are compared to the theoretical analysis given by Valley,1 and various photorefractive parameters are deduced.

© 1987 Optical Society of America

PDF Article
More Like This
Picosecond pulse amplification by two-wave mixing in silicon at 1.06 μm

H. J. EICHLER and M. GLOTZ
MDD4 International Quantum Electronics Conference (IQEC) 1987

Four-wave mixing in semi-insulating InP:Fe and GaAs:Cr at 1.06 μm using the photo-refractive effect

A. M. Glass, A. M. Johnson, D. H. Olson, W. M. Simpson, and A. A. Ballman
THM3 Conference on Lasers and Electro-Optics (CLEO) 1984

Nondegenerate two-wave mixing in ruby

IAN McMICHAEL and POCHI YEH
MDD3 International Quantum Electronics Conference (IQEC) 1987

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription