Abstract
Interest in semiconductor multiple quantum well (MQW) materials has been stimulated by the demonstration that they exhibit pronounced excitonic resonances in optical absorption at room temperature. Very small saturation intensities have been reported for the excitonic absorption in GaAs/AlGaAs multiple quantum wells fabricated by molecular beam epitaxy.1-3 We have begun a study of the same structures grown by metal-organic chemical vapor deposition (MOCVD). The growth conditions were tailored to optimize the nonlinear optical properties.
© 1987 Optical Society of America
PDF ArticleMore Like This
H. C. Lee, A. Hariz, P. D. Dapkus, A. Kost, M. Kawase, and E. Garmire
FA2 Photonic Switching (PS) 1987
Alan Kost, Masatoshi Kawase, and Elsa Garmire
MR7 OSA Annual Meeting (FIO) 1987
A. M. FOX, A. C. MACIEL, J. F. RYAN, and M. D. SCOTT
THGG53 International Quantum Electronics Conference (IQEC) 1987