Abstract

The generation of subpicosecond electrical pulses has recently been demonstrated using fast photoconductive switches driven by short laser pulses.¹ In these measurements electrical pulses of the order of 0.6 ps were obtained by shorting a charged transmission line fabricated on an ion- implanted silicon-on-sapphire (SOS) wafer. The major factors determining the shape and duration of these electrical pulses were the laser pulse widths, the circuit characteristics of the photoconductive gaps and the transmission line, and the carrier lifetime of the semiconductor.

© 1987 Optical Society of America