Abstract
We performed a systematic study of the changes in the excitonic properties of GaAs multiple-quantum-well structures induced by a femtosecond laser pulse falling in the transparency region of the material, below the lowest heavy-hole exciton. Such nonlinear effects are of great importance for applications in ultrafast all-optical devices, since they have an inherent very fast response time and low-power dissipation, being associated with virtual interband transitions. Experiments have been performed as a function of laser detuning from the lowest exciton resonance (at fixed laser intensity) or alternatively as a function of input laser intensity at a fixed detuning. Furthermore, results obtained in several samples with different well and barrier sizes have been compared using similar excitation conditions.
© 1987 Optical Society of America
PDF ArticleMore Like This
A. Mysyrowicz, D. Hulin, A. Migus, A. Antonetti, H. M. Gibbs, N. Peyghambarian, and H. Morkoc
FA1 Picosecond Electronics and Optoelectronics (UEO) 1987
H. C. Lee, A. Hariz, P. D. Dapkus, A. Kost, M. Kawase, and E. Garmire
FA2 Photonic Switching (PS) 1987
D. HULIN, A. MYSYROWICZ, A. ANTONETTI, A. MIGUS, W. T. MASSELINK, M. MORKOC, HYATT M. GIBBS, and N. PEYGHAMBARIAN
WDD5 International Quantum Electronics Conference (IQEC) 1986