Abstract

We measured the saturation of the absorption coefficient of both bulk and multiple-quantum-well (MQW) samples of Ga0.47In0.53As/InP at room temperature. The samples used were grown by metal-organic chemical vapor deposition. The bulk material was a 1.6-μm thick epilayer grown on an InP substrate, while the MQW consisted of thirty periods with 150-Å wells. The MQW sample showed strong excitonic enhancement of the 2-D absorption edge both at 4 K and room temperature. The measurements were made using a tunable Co:MgF2 laser.1 Q-switched pulses of 1-μs duration and 30-W peak power were used to generate intensities up to 2 × 105 W cm−2 in the sample.

© 1987 Optical Society of America

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References

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