Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1986),
  • paper WDD1

Photoemission and photoluminescence from GaAs/GaAIAs superlattices

Not Accessible

Your library or personal account may give you access

Abstract

There has been a large amount of experimental and theoretical work on optical excitation between quantized levels of superlattices or quantum wells. Most results deal with level spectroscopy, but fewer are concerned with the transport of electrons perpendicular to the layers in the absence of an electric field. We report photoemission measurements in a GaAs/GaAIAs superlattice covered by a GaAs surface activated to negative electron affinity by cesium and oxygen coadsorption.

© 1986 Optical Society of America

PDF Article
More Like This
Absorption modulation in GaAs doping superlattices

T. B. SIMPSON, C. A. PENNISE, B. E. GORDON, J. E. ANTHONY, D. SMITH, and T. R. AUCOIN
WDD4 International Quantum Electronics Conference (IQEC) 1986

Photoelectronic processes in semiconductors activated to negative electron affinity

G. LAMPEL
QTHF1 International Quantum Electronics Conference (IQEC) 1990

Tunable photoluminescence of uniformly doped short-period GaAs doping superlattices

Kent D. Choquette, Leon McCaughan, J. E. Potts, D. K. Misemer, G. Haugen, and G. D. Vernstrom
MB4 Integrated Photonics Research (IPR) 1990

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved