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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1986),
  • paper MGG1

Influence of electric fields on the carrier lifetime in quantum wells

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Abstract

The optical absorption band edge of quantum wells (QW) can be shifted by electric fields applied perpendicular to the layers. This shift, usually called the quantum-confined Stark effect (QSCE), originates from the electric field-induced polarization of electron-hole pairs which are confined in the wells.1–3

© 1986 Optical Society of America

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