Femtosecond carrier relaxation in semiconductor-doped glasses

M. C. NUSS; W. ZINTH; W. KAISER

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1986),
paper MBB2

Femtosecond carrier relaxation in semiconductor-doped glasses

M. C. NUSS, W. ZINTH, and W. KAISER

International Quantum Electronics Conference 1986

San Francisco, California United States
9–13 June 1986
ISBN: 0-936659-11-4

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Ultrafast Phenomena: 1 (MBB)

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M. C. NUSS, W. ZINTH, and W. KAISER, "Femtosecond carrier relaxation in semiconductor-doped glasses," in International Quantum Electronics Conference, M. Richardson, C. Tang, D. Grischkowsky, and T. Hansch, eds., OSA Technical Digest (Optica Publishing Group, 1986), paper MBB2.

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Abstract

During the past few years femtosecond light pulses have been used to investigate fast relaxational processes in bulk semiconductors.¹ Here we report on femtosecond optical studies of semiconductor-doped glasses. We show that very rapid absorbance changes occur which can be explained within the framework of semiconductor physics.

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