Dynamic switching characteristics of an InSb bistable etalon

H. A. AL-ATTAR; HUGH A. MACKENZIE; W. J. FIRTH

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1986),
paper FEE6

Dynamic switching characteristics of an InSb bistable etalon

H. A. AL-ATTAR, HUGH A. MACKENZIE, and W. J. FIRTH

International Quantum Electronics Conference 1986

San Francisco, California United States
9–13 June 1986
ISBN: 0-936659-11-4

From the session
Optical Bistability (FEE)

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H. A. AL-ATTAR, H. A. MACKENZIE, and W. J. FIRTH, "Dynamic switching characteristics of an InSb bistable etalon," in International Quantum Electronics Conference, M. Richardson, C. Tang, D. Grischkowsky, and T. Hansch, eds., OSA Technical Digest (Optica Publishing Group, 1986), paper FEE6.

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Abstract

We report the first observation of the critical slowing down effect in an intrinsic semiconductor bistable device. The statistical method used in this experiment allows one to observe transient bimodality which arises from noise. The switch- on and switch-off have been analyzed numerically in the case of the bad cavity limit using a modified Debye dynamic equation.

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