Abstract
Mixing and harmonic generation in the far infrared, i.e., near and below optical active phonons, are due to the ionic in addition to the electronic nonlinear polarizability. We have determined the frequency dependence of the absolute nonlinear susceptibility χ(2) in the range 20 to 120 cm−1, in GaAs and LiTaO3, by frequency doubling using gaslaser pulses. Strong third-harmonic generation in the far infrared is observed in doped Ge, Si, InSb, and GaAs and is found to be a single-particle free-carrier effect.
© 1984 Optical Society of America
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