Abstract
Although the first semiconductor lasers were reported in 1962,1–4 it was not until 1970 that continuous, room-temperature laser operation was demonstrated.5,6 This achievement required the implementation of lattice-matched heterostructures,7 which were fabricated by improved crystal growth techniques. Since the early 1970's, much effort has been devoted to refining both the laser structure and crystal growth. Recently, one of these techniques, metalorganic chemical vapor deposition (MO-CVD), has become increasingly popular as a consequence of its versatility and economy. The chemistry of MO-CVD growth of III-V compounds was pioneered by Manasevits as early as 19688; however, it was Dupuis and Dapkus9 who demonstrated that high-laser-quality GaAs/GaAlAs heterostructures can be achieved by MO-CVD.
© 1984 Optical Society of America
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