Abstract
We report our recent results on hot carrier relaxation in highly excited GaAs/AlGaAs multiple-quantum-well structures (MQW) using the picosecond nonlinear hot-luminescence correlation technique.1 A strong carrier-density dependence in the cooling rate of hot carriers in MQW structures was found, in sharp contrast with the case for bulk GaAs. Thus, at carrier densities higher than those previously studied2 the cooling rates of hot carriers following picosecond pulse excitation in the MQW were found to be significantly lower than those in bulk GaAs.
© 1984 Optical Society of America
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