Silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions

Omid Jafari; Sasan Zhalehpour; Wei Shi; Sophie LaRochelle

doi:10.1364/IPRSN.2020.JTh2A.3

OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF)
OSA Technical Digest (Optica Publishing Group, 2020),
paper JTh2A.3
•https://doi.org/10.1364/IPRSN.2020.JTh2A.3

Silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions

Omid Jafari, Sasan Zhalehpour, Wei Shi, and Sophie LaRochelle

Integrated Photonics Research, Silicon and Nanophotonics 2020

Washington, DC United States
13–16 July 2020
ISBN: 978-1-943580-79-8

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Advances in Integrated Photonics and Polarization Engineering (JTh2A)

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O. Jafari, S. Zhalehpour, W. Shi, and S. LaRochelle, "Silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions," in OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF), L. Caspani, A. Tauke-Pedretti, F. Leo, and B. Yang, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper JTh2A.3.

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Abstract

We experimentally demonstrate a silicon photonic modulator loaded by lateral and interleaved p-n junctions simultaneously. Operated in reflection without a circulator, we demonstrate OOK up to 45Gbit/s with a short phase shifter length of 290µm.

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