Ultrawide Bandgap β-Ga2O3: Material Epitaxy, Doping, Heterostructures and Devices

Hongping Zhao

doi:10.1364/IPRSN.2020.IW2A.1

OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF)
OSA Technical Digest (Optica Publishing Group, 2020),
paper IW2A.1
•https://doi.org/10.1364/IPRSN.2020.IW2A.1

Ultrawide Bandgap β-Ga₂O₃: Material Epitaxy, Doping, Heterostructures and Devices

Hongping Zhao

Integrated Photonics Research, Silicon and Nanophotonics 2020

Washington, DC United States
13–16 July 2020
ISBN: 978-1-943580-79-8

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Novel Materials Processing and Fabrication Techniques (IW2A)

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H. Zhao, "Ultrawide Bandgap β-Ga2O3: Material Epitaxy, Doping, Heterostructures and Devices," in OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF), L. Caspani, A. Tauke-Pedretti, F. Leo, and B. Yang, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper IW2A.1.

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Abstract

β-Ga₂O₃ represents an emerging ultrawide bandgap semiconductor for power electronics. This talk focuses on discussing the development of β-Ga₂O₃ and (Al_xGa_1-x)₂O₃ materials epitaxy, doping, heterostructure and device demonstration.

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