Abstract

Gallium phosphide-on-insulator (GaP-OI) has recently emerged as a promising platform for integrated nonlinear photonics due to its intrinsic material properties. Here we demonstrate the transfer of GaP layers to an oxidized silicon wafer using micro-transfer printing as a new approach for versatile future (hetero)-integrations.

© 2020 The Author(s)

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More Like This
Gallium phosphide transfer printing for integrated nonlinear photonics

Maximilien Billet, Nicolas Poulvellarie, Camiel Op de Beeck, Luis Reis, Yoan Léger, Charles Cornet, Fabrice Raineri, Isabelle Sagnes, Konstantinos Pantzas, Grégoire Beaudoin, Gunther Roelkens, Francois Leo, and Bart Kuyken
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