We demonstrate InGaAs/InP photodiodes on Si3N4 waveguides with record-high external (internal) responsivities of 0.68 A/W (0.8 A/W) and 0.24 A/W (0.6 A/W) at 1550 nm and 1064 nm, respectively. Balanced photodiodes have a low dark current of 10 nA, 7 GHz bandwidth, and over 40 dB common mode rejection ratio.

© 2019 The Author(s)

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