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Conferences > IPRSN > 2018 > IW3B > IW3B.4

Low Voltage, High Optical Power Handling, Bulk GaAs/AlGaAs Electro-optic Modulators

Prashanth Bhasker, Justin Norman, John Bowers, and Nadir Dagli

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Abstract

AlGaAs electro-optic modulators with Vπ = 1.1 V are reported. Bandgap in the device is larger than twice the photon energy at 1550 nm eliminating material absorption, including two-photon absorption, making these devices ideal for analog photonic links.

© 2018 The Author(s)

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