Rare Earth doped GaN for photonic devices

V. X. Ho; H. X. Jiang; J. Y. Lin; J. M. Zavada; N. Q. Vinh

doi:10.1364/IPRSN.2017.ITh2C.5

Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS)
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper ITh2C.5
•https://doi.org/10.1364/IPRSN.2017.ITh2C.5

Rare Earth doped GaN for photonic devices

V. X. Ho, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh

Integrated Photonics Research, Silicon and Nanophotonics 2017

New Orleans, Louisiana United States
24–27 July 2017
ISBN: 978-1-943580-30-9

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Novel Devices and Applications (ITh2C)

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V. X. Ho, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh, "Rare Earth doped GaN for photonic devices," in Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS), OSA Technical Digest (online) (Optica Publishing Group, 2017), paper ITh2C.5.

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Abstract

We report excitation mechanisms, quantum efficiency as well as the thermal quenching of photoluminescence processes in rare earth ions (Er and Nd) in GaN grown by metal organic chemical vapor deposition.

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