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Phase-Change Materials for Electro-Optical Switching in the Near- and Mid-Infrared

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Abstract

At wavelengths of 1.55 to 3.0 μm, theoretical simulations were made of electro-optical 2 x 2 switching utilizing a thin-film of Ge2Sb2Te5 or GeTe or GeSe that offers two voltage-triggered self-holding optical states. Low loss and low crosstalk were predicted but experiments are needed to confirm the theory.

© 2015 Optical Society of America

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