Abstract

The integration of III-V or III-N materials onto selected regions of a silicon or silicon-on-insulator (SOI) with the goal of creating electronic-photonic circuits is examined. Epitaxial transfer and bonding methods are discussed, as well as issues of CMOS compatibility and the thermal environment of the III-V devices. Possible devices for future electronic-photonic integration are also discussed.

© 2015 Optical Society of America