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Nanophotonic, Hot-Electron Avalanche Solar-Blind Ultraviolet Detectors with a Metal-Oxide-Semiconductor Structure

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Abstract

We present nanophotonic MOS solar-blind avalanche UV detectors with 0.95A/W responsivity at λ=290 nm (400% efficiency), using Sn nanogratings as the active UV absorber for hot-electron generation and transport across the metal/oxide barrier.

© 2015 Optical Society of America

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