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Conferences > IPRSN > 2012 > IM4A > IM4A.3

Low Power SiGe Electroabsorption Modulators for Optical Interconnects

Edward T. Fei, Elizabeth H. Edwards, Yijie Huo, Xiaochi Chen, Stephanie A. Claussen, Xi Liu, Yiwen Rong, Theodore I. Kamins, David B. Miller, and James S. Harris

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Abstract

We demonstrate low voltage quantum-confined Stark effect electroabsorption in a Ge/SiGe quantum well diode with a new thin intrinsic layer design, showing the potential for absorptive modulators with low photocurrent dissipation power.

© 2012 Optical Society of America

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