Abstract
Electroluminescence at 980nm and 1535nm from erbium-doped silicon nitride films was reported and the Er effective excitation cross section was measured under electrical pumping. .Erbium electroluminescence is observed at voltages as low as 5V.
© 2010 Optical Society of America
PDF ArticleMore Like This
Yiyang Gong, Maria Makarova, Selçuk Yerci, Rui Li, Luca Dal Negro, and Jelena Vučković
FWQ2 Frontiers in Optics (FiO) 2010
Debo Olaosebikan, Alexander Gondarenko, Kyle Preston, Michal Lipson, Selcuk Yerci, Rui Li, and Luca Dal Negro
CTuN4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009
Gary Shambat, Yiyang Gong, Jesse Lu, Selçuk Yerci, Rui Li, Luca Dal Negro, and Jelena Vučković
JThE35 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010