Raman Emission in Silicon Waveguides

Bahram Jalali; Ricardo Claps; Dimitri Dimitropoulos; Yan Han

doi:10.1364/IPR.2003.ITuC3

Integrated Photonics Research
OSA Trends in Optics and Photonics (Optica Publishing Group, 2003),
paper ITuC3
•https://doi.org/10.1364/IPR.2003.ITuC3

Raman Emission in Silicon Waveguides

Bahram Jalali, Ricardo Claps, Dimitri Dimitropoulos, and Yan Han

Integrated Photonics Research 2003

Washington, D.C. United States
15–20 June 2003
ISBN: 1-55752-751-2

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Silicon-Based Devices (ITuC)

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B. Jalali, R. Claps, D. Dimitropoulos, and Y. Han, "Raman Emission in Silicon Waveguides," in Integrated Photonics Research, A. Sawchuk, ed., Vol. 91 of OSA Trends in Optics and Photonics (Optica Publishing Group, 2003), paper ITuC3.

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Abstract

The strong optical confinement in Si/SiO₂ structures creates an opportunity for observing and exploiting 3^rd-order nonlinear optical phenomena in silicon. This paper describes Raman emission in silicon-on-insulator waveguides and explores the prospect for silicon optical amplifiers.

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