Abstract
Silicon-on-Insulator waveguides are a primary option for ultra-small optical integrated systems, due to the high refractive index contrast between the silicon core and the silicon oxide cladding. SOI substrates are increasingly considered for integrated optics at telecommunication wavelengths and are also quite suitable material for high performance integrated circuits, allowing the development of optical interconnects on chip [1]-Silicon transparency in the near infrared and the mature technological process are main advantages for guided optics on SOI substrates. The thin silicon layer (usually 0.2 μm for standard SOI microelectronics substrates) above the buried oxide constitutes a planar waveguide at 1.3 or 1.5 μm wavelength, with low propagation loss [2]. Lateral field confinement in 2D waveguides with sub-micron width can be obtain either by partial etching of the silicon layer to get a rib waveguide, or by complete etching for a strip waveguide. Recent measurement showed that losses smaller than a few dB/cm can be achieved [3,4].
© 2002 Optical Society of America
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