A. Holmes, Jr., X. Sun, S. Wang, X. G. Zheng, X. Li, and J. C. Campbell, "Resonant-cavity-enhanced GaAsSb avalanche photodiodes with separate absorption, charge and multiplication regions operating at 1300nm,"
in Integrated Photonics Research, A. Sawchuk, ed.,
Vol. 78 of OSA Trends in Optics and Photonics
(Optical Society of America, 2002), paper IThE4.