Abstract
GaAs based lasers have demonstrated during the last few years significant progress regarding the long wavelength range required for telecom applications. Using either quantum dots or GalnNAs the emission wavelength can be shifted into the 1.3 μm range [1-5]. For GalnNAs in addition the 1.5 μm telecom window has been reached recently [6],[7]. Compared to InP based lasers the GaAs systems offers a number of advantages including an increased temperature stability due to a high conduction band offset. In addition, the possibility to monolithically combine GalnNAs active regions with AlGaAs based distributed Bragg Reflectors (DBRs) makes this material system highly attractive for long wavelength vertical-cavity surface emitting lasers (VCSELs). Furthermore GaAs based lasers can be grown more economically as larger area substrates are available.
© 2002 Optical Society of America
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