Deep dry etching of InP with Ti-SiO2 bi-level mask in methane-hydrogen-argon for photonics applications

R. Grover; R. Grover; J. V. Hryniewicz; J. V. Hryniewicz; O. King; O. King; V. Van; V. Van

doi:10.1364/IPR.2001.IWB4

Integrated Photonics Research
OSA Trends in Optics and Photonics Series (Optica Publishing Group, 2001),
paper IWB4
•https://doi.org/10.1364/IPR.2001.IWB4

Deep dry etching of InP with Ti-SiO₂ bi-level mask in methane-hydrogen-argon for photonics applications

R. Grover, J. V. Hryniewicz, O. King, and V. Van

Integrated Photonics Research 2001

Monterey, California United States
ISBN: 1-55752-673-7

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Novel Waveguide Materials and Processing (IWB)

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R. Grover, J. V. Hryniewicz, O. King, and V. Van, "Deep dry etching of InP with Ti-SiO2 bi-level mask in methane-hydrogen-argon for photonics applications," in Integrated Photonics Research, A. Sawchuk, ed., Vol. 58 of OSA Trends in Optics and Photonics Series (Optica Publishing Group, 2001), paper IWB4.

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Abstract

We present a process for deep dry etching of InP for vertical, facet-quality sidewalls by RIE for etch depths as high as 5.8µm. Sidewall roughness is estimated to be a few nm.

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