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ULTRASHORT IN-PLANE SEMICONDUCTOR MICROLASERS WITH HIGH REFLECTIVITY MICROSTRUCTURED MIRRORS

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Abstract

We present very compact, as short as 20 urn long, lowthreshold in-plane semiconductor lasers operating at a wavelength of 980 run, in which microstructured mirrors have been formed at both cavity ends by deep reactive ion etching.

© 2000 Optical Society of America

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