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Conferences > IPR > 2000 > IThI > IThI1

Multiple-Quantum-Well Optical Modulators in Strain-Balanced In1−xGaxAs/InL1−yGayP on InP for Smart-Pixel Application

Y. J. Lee, J. W. Kim, H. J. Kim, S. Lee, D. H. Woo, G. Y. Robinson, and D. L. Lile

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Abstract

Multiple-quantum-well surface-normal electroabsorption optical modulators in strain-balanced In1−xGa, As/In1−yGayP on InP, which includes a 'pulse doped' layer so as to allow integration with FET's for 'smart-pixel' application showed characteristics of 5300cm"1 absorption coefficient change, a maximum change in transmission of 16%, and fractional transmission and reflection modulation of 27% and 50 %, respectively, at a wavelength of 1.67u.m with 13V bias.

© 2000 Optical Society of America

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