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Conferences > IPR > 2000 > IThG > IThG4

Post-growth processing of 1.55 μm InP/InGaAs/InGaAsP material for integrated laser-modulator device fabrication

V. Aimez, J. Beauvais, J. Beerens, H.S. Lim, S. L. Ng, and B.S. Ooi

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Abstract

Low energy ion implantation induced intermixing has been used to selectively blueshift 1.55μm InP/lnGaAs/InGaAsP material. Intra-cavity electro-absorption modulators have been fabricated using this method. Integrated laser-modulator device parameters show no indication of degradation following the intermixing process.

© 2000 Optical Society of America

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