Piezoelectric and Spontaneous Polarization Effects in Nitride Heterostructure Optoelectronics

Hongtao Jiang; Yifei Zhang; Jasprit Singh

doi:10.1364/IPR.1999.RTuF2

Integrated Photonics Research
OSA Technical Digest Series (Optica Publishing Group, 1999),
paper RTuF2
•https://doi.org/10.1364/IPR.1999.RTuF2

Piezoelectric and Spontaneous Polarization Effects in Nitride Heterostructure Optoelectronics

Hongtao Jiang, Yifei Zhang, and Jasprit Singh

Integrated Photonics Research 1999

Santa Barbara, California United States
ISBN: 1-55752-586-2

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GaN Device Modeling (RTuF)

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H. Jiang, Y. Zhang, and J. Singh, "Piezoelectric and Spontaneous Polarization Effects in Nitride Heterostructure Optoelectronics," in Integrated Photonics Research, OSA Technical Digest Series (Optica Publishing Group, 1999), paper RTuF2.

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Abstract

Materials in the III-V nitride family (InN, GaN and AIN) have physical properties that are very attractive for short wavelength light emission and for high power/high temperature electronics.

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