A Numerical Study of Spatially Controlled Impurity-Free Vacancy Enhanced Quantum Well Intermixing

Y. H. Wong; K. S. Chan; E. Y. B. Pun; A. H. P. Ho; P. S. Chung; J. H. Marsh

Integrated Photonics Research
OSA Technical Digest (Optica Publishing Group, 1998),
paper IMH6

A Numerical Study of Spatially Controlled Impurity-Free Vacancy Enhanced Quantum Well Intermixing

Y. H. Wong, K. S. Chan, E. Y. B. Pun, A. H. P. Ho, P. S. Chung, and J. H. Marsh

Integrated Photonics Research 1998

British Columbia Canada
ISBN: 1-55752-521-8

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Y. H. Wong, K. S. Chan, E. Y. B. Pun, A. H. P. Ho, P. S. Chung, and J. H. Marsh, "A Numerical Study of Spatially Controlled Impurity-Free Vacancy Enhanced Quantum Well Intermixing," in Integrated Photonics Research, Vol. 4 of OSA Technical Digest (Optica Publishing Group, 1998), paper IMH6.

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Abstract

The impurity-free vacancy disordering (IFVD) technique using SiO₂ capping layer is widely used to integrate monolithically optoelectronic devices^1,2,3.

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