Abstract

Vertical-cavity surface emitting lasers (VCSELs) are promising for parallel optical interconnection and optical processing. 0.85-fim VCSELs offer some practical advantages over 0.98-(im ones [1-3] in that they can be used with standard optical fiber and more sensitive Si and GaAs-based receivers. However, it is generally difficult to fabricate 0.85-|im bottom-emitting VCSELs that have low parasitic capacitance and high thermal conductance by introducing flip-chip bonding. We previously reported 0.85-ja.m bottom-emitting VCSELs on an AlGaAs substrate [4-5]. However, their performance was not satisfactory and the utility of flip-chip bonding was not demonstrated.

© 1996 Optical Society of America