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CHARACTERIZATION OF GeSi/Si STRAIED LAYER SUPERLATTICE AVALANCHE PHOTODIODE

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Abstract

We report the material and device characterization of SiGe/Si strained layer superlattice (SLS) avalanche photodiodes (APDs). The active absorption and multiplication region of the device consists of ten periods of Si0.5Ge0.5/Si SLS. The device exhibits an optical response at 1.3 µm and has a cutoff at 1.5 µm at normal incidence. The device shows a linear photoresponse as a function of the load resistance upto 0.1 MΩ. Avalanche breakdown as evidenced by the positive temperature dependence of the breakdown voltage has been demonstrated. The temperature coefficient of the breakdown voltage is measured to be 0.01 V/K. Multiplication factors in excess of 50 have been obtained. The measured excess noise factor is even lower than that of Si, due to the enhanced ionization ratio in this SLS-APD as compared to that in bulk Si.

© 1996 Optical Society of America

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