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Modal Behavior of Buried Heterostructure Vertical Cavity Semiconductor Lasers

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Abstract

Mode control of vertical cavity surface emitting lasers (VCSEL) is important for many applications ranging from optical interconnects to optical communications. Recently we have reported a novel buried heterostructure (BH) VCSEL lasing in a stable fundamental transverse mode [1] with the use of a passive antiguide region inside of the cavity. In the presence of a guiding boundary along the laser cavity, an analysis of mode structure cannot be based on an integral equation approach [2], but it is necessary to implement round-trip beam-propagation method. This paper is devoted to a detailed analysis of mode structure and modal losses of cavities with different antiguide and guiding regions.

© 1994 Optical Society of America

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